A 0.1-14 GHz wideband SiGe BiFET power amplifier

Author

Park, Jonghoo ; Ma, Pingxi ; Racanelli, Marco ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI

fYear

2006

fDate

18-20 Jan. 2006

Abstract

In this paper, a wide bandwidth power amplifier, employing a MOS-HBT-HBT (BiFET) cascode as the unit section of distributed amplifier to provide improved output power as well as bandwidth, is designed. A four section distributed amplifier delivers a maximum output power of 22.8 dBm at 13 dBm input power, with -3 dB bandwidth of 13.9 GHz (0.1-14 GHz). The bandwidth and RF power achieved from this amplifier demonstrate that SiGe BiFET wideband power amplifiers have the potential to offer high performance for system-on-a-chip (SoC) integration

Keywords

MMIC power amplifiers; distributed amplifiers; field effect integrated circuits; field effect transistors; heterojunction bipolar transistors; wideband amplifiers; 0.1 to 14 GHz; 13.9 GHz; BiFET power amplifier; MOS-HBT-HBT cascode; SiGe; distributed amplifier; system-on-a-chip; wideband amplifier; Bandwidth; Broadband amplifiers; Distributed amplifiers; Germanium silicon alloys; High power amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587932

Filename

1587932