Parameter extraction for mos model 11 using Particle Swarm Optimization

Author

Chopde, A.M. ; Khandelwal, S. ; Thakker, R.A. ; Patil, M.B. ; Anil, K.G.

Author_Institution

IIT Bombay, Mumbai

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

253

Lastpage

256

Abstract

Efficient DC parameter extraction technique for MOS model 11, level 1100 (MM11) is outlined. The parameters are extracted step-by-step depending upon the characteristics where they play a major role. We have used particle swarm optimization (PSO) and genetic algorithm (GA) to extract parameters for NMOS device with 65 nm technology. To the best of the authors knowledge, this is the first application of PSO algorithm for MOSFET parameter extraction. It has been observed that PSO algorithm performs much better as compared to GA in terms of accuracy and consistency. The proposed extraction strategy has been verified for the same technology for 150 nm and 90 nm devices.

Keywords

MOSFET; genetic algorithms; particle swarm optimisation; semiconductor device models; DC parameter extraction technique; MOS model 11; MOSFET parameter extraction; NMOS device; genetic algorithm; particle swarm optimization; size 150 nm; size 65 nm; size 90 nm; Birds; CMOS technology; Circuit simulation; Genetics; Geometry; MOSFET circuits; Parameter extraction; Particle swarm optimization; Semiconductor device modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472494

Filename

4472494