Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation

Author

Yau, Kenneth H K ; Voinigescu, Sorin P.

Author_Institution

Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.

fYear

2006

fDate

18-20 Jan. 2006

Abstract

The technique to extract the SiGe HBT noise parameters only from the measured y-parameters is extended to account for the presence of noise correlation. Unlike earlier publications, this method does not need to fit the noise transit time to measured noise data. The technique was validated using 2D device simulations and measured noise parameter data. It was found that the NF_MIN of SiGe HBTs with f_T/f_MAX of 160 GHz is approximately 1dB lower at 60 GHz when noise correlation is accounted for. However, for these devices noise correlation proves to be insignificant below 18 GHz

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave transistors; semiconductor device models; semiconductor device noise; 160 GHz; 60 GHz; SiGe; Y-parameters; heterojunction bipolar transistors; noise correlation; noise modeling; noise transit time; Circuit noise; Electric variables measurement; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; MOSFETs; Noise figure; Noise measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587951

Filename

1587951