A SiGe monolithically integrated 75 GHz push-push VCO

Author

Wanner, Robert ; Lachner, Rudolf ; Olbrich, Gerhard R.

Author_Institution

Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany

fYear

2006

fDate

18-20 Jan. 2006

Abstract

In this paper we present a fully monolithically integrated push-push VCO fabricated in a production-near SiGe:C bipolar technology. The output frequency of the oscillator can be varactor tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 ± 0.4 dBm and the measured single sideband phase noise is less than -105dBc/Hz at 1MHz offset frequency. The SiGe:C bipolar transistors show a maximum transit frequency f_T = 200 GHz and a maximum frequency of oscillation f_max = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.

Keywords

Ge-Si alloys; MIM devices; MMIC oscillators; bipolar transistors; capacitors; millimetre wave oscillators; resistors; voltage-controlled oscillators; 200 GHz; 275 GHz; 71.3 to 75.8 GHz; MIM-capacitors; SiGe; bipolar transistors; integrated resistors; monolithically integrated push-push VCO; transmission-line components; voltage controlled oscillator; Frequency measurement; Germanium silicon alloys; Noise measurement; Phase measurement; Power generation; Power measurement; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1588001

Filename

1588001