MOVPE growth and optimization of GRINSCH single quantum well AlGaAs/GaAs laser diodes

Author

Bag, Rajesh K. ; Tyagi, Renu ; Haldar, T. ; Singh, Mahavir ; Mohan, Premila ; Mishra, Puspashree ; Muralidharan, R.

Author_Institution

Solid State Phys. Lab., Delhi

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

521

Lastpage

524

Abstract

In the present paper we report the MOVPE growth of GaAs/AlGaAs graded-index separate confinement heterostructure (GRINSCH) single quantum well (SQW) laser structure at relatively low temperature. Low temperature growth was possible by controlling various growth parameters as well as external sources of oxygen contamination. The grown structures were characterized by photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) technique. Stripe geometry laser diodes were fabricated on the grown structures. The laser parameters such as threshold current, slope efficiency and peak power were measured.

Keywords

MOCVD; X-ray diffraction; photoluminescence; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; AlGaAs; MOVPE growth; X-ray diffraction; graded-index separate confinement heterostructure; laser diode; laser structure; peak power; photoluminescence; single quantum well; slope efficiency; threshold current; Contamination; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Photoluminescence; Quantum well lasers; Temperature control; X-ray diffraction; X-ray lasers; GRINSCH; GaAs/AlGaAs; Laser diode; MOVPE; SQW;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472564

Filename

4472564