DocumentCode
3173628
Title
Scanning probe photocurrent microscopy of polymer based devices
Author
Narayan, K.S. ; Kabra, Dinesh ; Gupta, Dhritiman
Author_Institution
Chem. & Phys. of Mater. Unit, Bangalore
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
540
Lastpage
540
Abstract
Summary form only given. Semiconducting polymer films when photoexcited with defined beam profiles generate excess charge carriers from the electronically excited state, which eventually spread over a volume exceeding the beam-sample cross-section. Our studies focuses on the length scales in model polymer systems, which are of fundamental importance in understanding the transport mechanisms and are crucial parameters for device development. A modified scanning photocurrent contrast microscopy technique was designed and implemented for these studies. The electron/hole transport processes can be independently evaluated by positioning the narrow-light beam selectively over the anode/cathode regions, enabling the estimation of the efficacy of hole transport vis-a-vis electron transport. Sizable photocurrent-signals between the electrodes are observed even at lateral distances several microns away from the counter electrode. These length scales in the first approximation corresponds to the mobility-lifetime product (mutau).
Keywords
carrier lifetime; conducting polymers; electron mobility; excited states; hole mobility; optical microscopy; organic semiconductors; photoelectricity; photoexcitation; polymer films; scanning probe microscopy; semiconductor devices; beam profiles; charge carriers; electron transport; electronically excited state; hole transport; mobility-lifetime product; photoexcitation; polymer based devices; scanning photocurrent contrast microscopy technique design; scanning probe photocurrent microscopy; semiconducting polymer films; transport mechanisms; Anodes; Charge carrier processes; Charge carriers; Electrodes; Electron beams; Microscopy; Photoconductivity; Polymer films; Probes; Semiconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472570
Filename
4472570
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