Parameter extraction for a physics-based circuit simulator IGBT model

Author

Kang, X. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R. ; Donlon, J.F.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

2

fYear

2003

fDate

9-13 Feb. 2003

Firstpage

946

Abstract

A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method.

Keywords

Fourier transforms; insulated gate bipolar transistors; parameter estimation; power semiconductor devices; semiconductor device models; Fourier-based-solution; IGBT model; NPT IGBT models; PT IGBT models; clamped inductive load test; parameter extraction; physics-based IGBT model; power semiconductor modeling; robustness; Analytical models; Bipolar transistors; Character generation; Circuit simulation; Insulated gate bipolar transistors; Low voltage; Parameter extraction; Power engineering and energy; Robustness; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-7768-0

Type

conf

DOI

10.1109/APEC.2003.1179330

Filename

1179330