Physical model, measurement setup and experiments of a measurement technique of the carrier lifetime profile in power devices

In this paper the physical model of a recently proposed technique to measure the spatial distribution of the majority and minority carrier lifetime along silicon epilayers is presented. The model, verified by numerical simulations, clarifies the behaviour of the test structure used in the technique and gives a physical interpretation of the measured quantities. Experimental measurements are also presented, performed by using a measurement setup which ensures correct and noiseless results.