• DocumentCode
    3176505
  • Title

    Electromigration failure of aluminum contact junctions

  • Author

    Aronstein, J.

  • Author_Institution
    Poughkeepsie, NY, USA
  • fYear
    1995
  • fDate
    2-4 Oct. 1995
  • Firstpage
    10
  • Lastpage
    16
  • Abstract
    Current flow in a typical aluminum contact interface occurs only where metallic junctions form at cracks in the insulating aluminum oxide. When the total metallic conducting area is small, current density may be high enough to initiate electromigration failure. These experiments use a solid aluminum specimen having a constricted current path, representing a single metallic contact junction. Tests are conducted at two current levels, with alternating or direct current flow. There is no significant change of potential drop during an initial stable period, after which the specimens fail abruptly as the failure occurs in both AC and DC specimens.
  • Keywords
    aluminium; electrical contacts; electromigration; failure analysis; Al; constricted current path; contact interface; contact junctions; current density; current levels; direct current flow; electromigration failure; potential drop; total metallic conducting area; Aluminum oxide; Atomic measurements; Contact resistance; Current density; Electromigration; Insulation; Protection; Solids; Testing; Thin film circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Contacts, 1995., Proceedings of the Forty-First IEEE Holm Conference on
  • Conference_Location
    Montreal, Quebec, Canada
  • Print_ISBN
    0-7803-2728-4
  • Type

    conf

  • DOI
    10.1109/HOLM.1995.482856
  • Filename
    482856