DocumentCode
3176701
Title
Analysis of hot carrier effects in low temperature poly-Si TFTs using device simulator
Author
Uraoka, Y. ; Hatayama, T. ; Fuyuki, T. ; Kawamura, T. ; Tsuchihashi, Y.
Author_Institution
Nara Inst. of Sci. & Technol., Japan
fYear
2001
fDate
2001
Firstpage
251
Lastpage
256
Abstract
Hot carrier degradation in low temperature poly-Si TFTs was analyzed using a device simulator. Degradation was found to be dominated by drain avalanche hot carriers (DAHC). The LDD structure was effective for improvement of the reliability. Degradation did not depend simply on the amount of hot carriers, but it was confirmed that hot carriers above the threshold energy induce the degradation
Keywords
cryogenic electronics; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; silicon; thin film transistors; DAHC; LDD structure; Si; device simulator; drain avalanche hot carriers; hot carrier degradation; hot carrier effects; low temperature poly-Si TFTs; reliability; Analytical models; Crystallization; Degradation; Hot carrier effects; Hot carriers; Materials science and technology; Stress; Temperature; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location
Kobe
Print_ISBN
0-7803-6511-9
Type
conf
DOI
10.1109/ICMTS.2001.928671
Filename
928671
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