• DocumentCode
    3178589
  • Title

    Novel WO3 nanoparticles modified electroless metallization to retard interfacial reaction and reinforce the reliability of solder interconnection

  • Author

    Xiao Hu ; Chan, Y.C.

  • Author_Institution
    City Univ. of Hong Kong, Kowloon Tong, China
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    1464
  • Lastpage
    1469
  • Abstract
    The role of under bump metallization becomes more important to control the sharp interfacial reaction. In the study, a Ni-P-WO3 composite layer was developed as a novel UBM for solder interconnection. It´s the first time tungsten oxide nanoparticles been used in solder metallization to reinforce the joint. After surface treatment, magnetic stirring and ultrasonically processing, the uniform distribution of WO3 nanoparticles was proved by SEM and XRD analysis. The conventional Ni-P layer was used for comparison. Microstructure evolution shows solder/Ni-P-WO3 joint has successfully slowed down the IMC growth rate at interface under various aging conditions. WO3 nanoparticles act as barrier to limit the atom inter-diffusion, result in controlled IMC spalling and less voids formation. Top-view IMC grains shows a finer structure on Ni-P-WO3 UBM. The activation energy of IMC growth in solder/Ni-P-WO3 calculated to be 47.2 KJ/mol, which is higher than that of plain solder joint. The alleviation of interfacial reaction is explained by the schematic diffusional mechanism in detail. With the incorporation of WO3 nanoparticles, mechanical properties like shear strength and tensile strength of the solder joints have been improved. Ni-P-WO3 UBM in solder interconnection with reinforced reliability is proved to be a potential replacement for conventional UBM for advanced electronic packaging, even can be extend to micro-bump in 3D packaging bonding.
  • Keywords
    X-ray diffraction; metallisation; nanoparticles; nickel; phosphorus; reliability; scanning electron microscopy; shear strength; solders; surface treatment; tensile strength; tungsten compounds; 3D packaging bonding; IMC growth rate; Ni-P-WO3 composite layer; Ni-P-WO3; SEM; UBM; XRD analysis; activation energy; advanced electronic packaging; atom inter-diffusion; controlled IMC spalling; interfacial reaction alleviation; magnetic stirring; micro-bump; microstructure evolution; reinforced reliability; schematic diffusional mechanism; shear strength; solder interconnection; solder metallization; surface treatment; tensile strength; top-view IMC grains; tungsten oxide nanoparticles; ultrasonically processing; under bump metallization; voids formation; Aging; Joints; Metallization; Microstructure; Nanoparticles; Nickel; Soldering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159790
  • Filename
    7159790