Multi quantum well (MQW) lasers at 1550 nm fabricated with a single epitaxial selective growth step by MOVPE without waveguide etching

Author

Van Caenegem, Tom ; Van Thourhout, Dries ; Van Daele, Peter ; Baets, Roel ; Moerman, Ingrid

Author_Institution

Dept. of Inf. Technol., Univ. of Gent, Belgium

fYear

2001

fDate

2001

Firstpage

133

Lastpage

135

Abstract

MQW lasers have been fabricated by means of a single selective epitaxial growth and without waveguide etching. Flat layer interfaces have been obtained for a wide range of mask widths and mask openings while retaining material quality and providing wide bandgap tuning range through the use of QW´s. Initial results show good laser performance at 1550 nm demonstrating the feasibility of the easy fabrication method for the realisation of more complex devices by means of active-passive integration

Keywords

MOCVD coatings; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1550 nm; MOVPE without waveguide etching; active-passive integration; easy fabrication method; flat layer interfaces; mask openings; mask widths; material quality; multiquantum well lasers; single epitaxial selective growth step; wide bandgap tuning range; Capacitive sensors; Epitaxial growth; Etching; Indium gallium arsenide; Indium phosphide; Laser tuning; Optical device fabrication; Quantum well devices; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929047

Filename

929047