DocumentCode
3181235
Title
Effect of Annealing on Optical and Band Gap Alignments of CdTe Thin Films Prepared by Pulsed Laser Deposition
Author
Savchuk, V. ; Kotlyarchuk, B. ; Zaginey, A. ; Lesyuk, R. ; Oszwaldowski, M.
Author_Institution
Nat. Acad. of Sci of Ukraine, Lviv
fYear
2007
fDate
23-26 May 2007
Firstpage
69
Lastpage
71
Abstract
The influence of postgrowth thermal annealing into various atmospheres (mercury and dry air) on the optical, electrical and photoelectric properties of CdTe thin films prepared by the pulsed laser deposition method were studied.
Keywords
II-VI semiconductors; annealing; cadmium compounds; electrical resistivity; energy gap; infrared spectra; photoelectricity; pulsed laser deposition; semiconductor thin films; CdTe; annealing effect; band gap alignment; electrical properties; optical alignment; optical properties; photoelectric properties; postgrowth thermal annealing; pulsed laser deposition; Annealing; Conductivity; Optical films; Optical pulses; Photonic band gap; Pulsed laser deposition; Sputtering; Substrates; Temperature; Thin film devices; CdTe thin films; Pulsed Laser Deposition; postgrowth thermal annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Perspective Technologies and Methods in MEMS Design, 2007. MEMSTECH 2007. International Conference on
Conference_Location
Lviv-Polyana
Print_ISBN
978-966-553-614-7
Type
conf
DOI
10.1109/MEMSTECH.2007.4283426
Filename
4283426
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