High-speed operation of a novel frequency divider using resonant tunneling chaos circuit

Author

Kawano, Y. ; Ohno, Y. ; Kishimoto, S. ; Maezawa, K. ; Mizutani, T.

Author_Institution

Graduate Sch. of Eng., Nagoya Univ., Japan

fYear

2001

fDate

2001

Firstpage

236

Lastpage

239

Abstract

This paper demonstrates high-frequency operation of a frequency divider IC composed of a resonant tunneling diode and a high electron mobility transistor. This circuit is based on the long-period behavior of the nonlinear circuits generating chaos. We investigate the effects of the input frequency, the bias voltage, and the input amplitude on the operation to discuss the operating margins. It is also shown that the dividing ratio can be selected by changing the input amplitude

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; chaos generators; field effect MMIC; frequency dividers; high-speed integrated circuits; indium compounds; resonant tunnelling diodes; 3 GHz; 4.5 GHz; 5 GHz; InP; InP-based RTD/HEMT microwave frequency divider IC; bias voltage; chaos generation; characteristic frequency; dividing ratio; high electron mobility transistor; high-frequency operation; high-speed operation; input amplitude; input frequency; long-period behavior; nonlinear circuits; operating margins; resonant tunneling chaos circuit; Chaos; Diodes; Frequency conversion; HEMTs; MODFETs; Nonlinear circuits; Resonance; Resonant frequency; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929101

Filename

929101