Effect of phosphine plasma treatment on protection from Si passivation in AlInAs/InGaAs HEMT due to F atoms

Author

Yamamoto, Kensuke ; Fujita, Norio ; Nakajima, Shigeru ; Sugino, Takashi

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

fYear

2001

fDate

2001

Firstpage

248

Lastpage

251

Abstract

A process technology to suppress diffusing fluorine (F) atoms into the AlInAs layer at elevated temperature is investigated using AlInAs/InGaAs HEMT wafers grown on InP substrates. Removal of F atoms adsorbed on the AlInAs surface and formation of a barrier layer to suppress F diffusion are attempted by a plasma process. It is demonstrated by SIMS measurements that diffusion of F atoms is suppressed even after annealing at 400°C for the AlInAs layer treated successively with phosphine plasma at room temperature and 250°C. Hall measurements also reveal that a reduction in the two dimensional electron gas density is suppressed

Keywords

Hall effect; III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; diffusion barriers; gallium arsenide; high electron mobility transistors; indium compounds; passivation; plasma materials processing; secondary ion mass spectra; two-dimensional electron gas; 250 C; 400 C; AlInAs surface; AlInAs-InGaAs; AlInAs/InGaAs HEMT; F; Hall measurements; InP substrates; PH₃; SIMS measurements; Si passivation protection; adsorbed F atoms; annealing; barrier layer; diffusing F atom suppression; phosphine plasma treatment; process technology; two dimensional electron gas density; Atomic layer deposition; Atomic measurements; HEMTs; Indium gallium arsenide; Indium phosphide; Plasma density; Plasma measurements; Plasma temperature; Protection; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929104

Filename

929104