Fast migration of plasma-induced defects in p-InP

Author

Okumura, Tsugunori ; Honda, Takanori ; Suhara, Michihiko

Author_Institution

Dept. of Electr. Eng., Tokyo Metropolitan Univ., Japan

fYear

2001

fDate

2001

Firstpage

260

Lastpage

263

Abstract

We investigated the electrical properties of plasma-induced defects in p-InP:Zn and discussed the migration mechanism of the defects. Two kinds of defects were responsible for the deactivation (or compensation) of the doped acceptors, when the sample was exposed to an Ar plasma. They migrate into the bulk region even at room temperature. One of them is tentatively identified as a hydrogen atom deliberately introduced into the crystal during processing. The other one consists of intrinsic point defect(s) due to displacement of constituent atoms. The intrinsic point defects could be frozen and become immobile at the surface by quenching at 77 K. The migration parameters for these defects are determined by performing reverse-bias-anneal (RBA) experiments in comparison with the simulation based on the defect reaction and drift-diffusion model

Keywords

III-V semiconductors; annealing; deep level transient spectroscopy; deep levels; defect states; diffusion; impurity-defect interactions; indium compounds; plasma materials processing; point defects; zinc; 13.56 MHz; 77 K; Ar plasma; InP:Zn; RF plasma system; acceptor compensation; acceptor deactivation; constituent atom displacement; defect migration mechanism; defect reaction simulation; doped acceptors; drift-diffusion model; electrical properties; hydrogen atom; intrinsic point defects; p-InP:Zn; plasma-induced defects; quenching; reverse-bias-anneal experiments; room temperature; Argon; Fabrication; Hydrogen; Indium phosphide; Mechanical factors; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929107

Filename

929107