• DocumentCode
    3181725
  • Title

    Mach-Zehnder modulators in GaAs/AlGaAs double quantum well structures: a regrowth-free approach for monolithic integration

  • Author

    Helmy, A.Saher ; Ooi, B.S. ; Camacho, F. ; Bryce, A.C. ; Aitchison, J.S. ; De La Rue, R.M. ; March, J.H.

  • Author_Institution
    Glasgow Univ., UK
  • fYear
    1997
  • fDate
    35747
  • Firstpage
    42583
  • Lastpage
    42587
  • Abstract
    We have demonstrated, to our knowledge for the first time, a monolithically integrable bandgap-tuned Mach Zehnder modulator in GaAs-AlGaAs QWs in which no regrowth or overgrowth technology is involved. Switching voltages are in the vicinity of 9 V mm-1
  • Keywords
    gallium arsenide; GaAs-AlGaAs; GaAs-AlGaAs QWs; GaAs/AlGaAs double quantum well structures; Mach-Zehnder modulators; electro optical modulation; electro optical switches; monolithic integration; monolithically integrable bandgap-tuned Mach Zehnder modulator; regrowth-free approach; switching voltages;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optoelectronic Integration and Switching (Ref. No: 1997/372), IEE Colloquium on
  • Conference_Location
    Glasgow
  • Type

    conf

  • DOI
    10.1049/ic:19971246
  • Filename
    660943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3181725