• DocumentCode
    3181886
  • Title

    Transport properties for different bubbler designs [MOVPE]

  • Author

    Ravetz, M.S. ; Odedra, R. ; Smith, L.M. ; Rushworth, S.A. ; Leese, A.B. ; Williams, G. ; Kanjolia, R.

  • Author_Institution
    Epichem Ltd., Wirral, UK
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    310
  • Lastpage
    313
  • Abstract
    In the MOVPE process a steady, controllable flux of precursor into the reaction chamber is a key factor when fabricating highly complex device structures employing ternary and quaternary layers. Historically a simple bubbler design has been employed to perform this task with carrier gas flow and source temperature control able to provide a suitably stable system. However, with the increasing volume demands placed on MOVPE equipment, increased flows and larger bubblers have become necessary and the simple dip tube (dip leg) approach is no longer 100% suitable. In this study, an investigation of 3 novel bubbler dip tube designs have been performed and a comparison made with the standard approach. An Epison III ultrasonic analyser was employed to monitor the pick up of the precursor from a variety of bubblers across a range of flow rates and temperatures. Flows up to 10 sclm have been investigated and differences observed between bubbler dip leg designs the results of which highlight the improvements achievable using a new crosspiece dip tube design
  • Keywords
    MOCVD; flow control; process control; process monitoring; temperature control; vapour phase epitaxial growth; Epison III ultrasonic analyser; MOVPE; bubbler designs; bubbler dip leg designs; bubbler dip tube designs; carrier gas flow control; complex device structures; controllable precursor flux; crosspiece dip tube design; pick up monitoring; quaternary layers; source temperature control; sparge system; ternary layers; transport properties; Control systems; Epitaxial growth; Epitaxial layers; Fluid flow; Leg; Monitoring; Process control; Semiconductor devices; Temperature control; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929120
  • Filename
    929120