Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD

Author

Moriguchi, H. ; Hoshi, S. ; Ohshima, T. ; Izumi, T. ; Tsunotani, M. ; Kimura, T.

Author_Institution

Dept. of Devices III-V, Oki Electric Ind. Co. Ltd., Tokyo, Japan

fYear

2001

fDate

2001

Firstpage

417

Lastpage

420

Abstract

We have observed the degradation of pinch-off characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) with SiN passivation film after the bias stress test, which has been resulted from an increase of leakage current on InP surface. On the other hand, the device passivated by SiO₂ film does not show any degradation. The stability of the isolation characteristic for InP is strongly affected by the surface passivation film formed by plasma-enhanced chemical vapor deposition (PCVD). In order to improve the device reliability, SiO₂ is more suitable than SiN for a stable passivation to InP surface

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; isolation technology; passivation; plasma CVD coatings; InAlAs-InGaAs; InAlAs/InGaAs high electron mobility transistor; InP; InP surface; SiN; SiO₂; bias stress; isolation degradation; leakage current; passivation film; pinch-off characteristics; plasma enhanced chemical vapor deposition; reliability; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Passivation; Plasma stability; Silicon compounds; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929147

Filename

929147