DocumentCode
3182457
Title
Epitaxial long wavelength DBRs on InP-AlAsSb or lateral oxidation
Author
Hall, E. ; Almuneau, G. ; Huntington, A. ; Naone, R. ; Chusseau, L. ; Kroemer, H. ; Coldren, L.A.
Author_Institution
Dept. of Mater., California Univ., Santa Barbara, CA, USA
fYear
1999
fDate
26-27 July 1999
Abstract
We examine two materials combinations that would provide the needed index contrast for monolithic VCSELs on InP, focusing first on arsenide-antimonide mixed group-V materials and then on laterally-oxidized AlInAs.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; epitaxial growth; optical losses; oxidation; semiconductor lasers; surface emitting lasers; AlAsSb; InP; arsenide-antimonide mixed group-V materials; epitaxial long wavelength DBR lasers; index contrast; lateral oxidation; laterally-oxidized AlInAs; monolithic VCSELs; Distributed Bragg reflectors; Indium phosphide; Lasers and Electro-Optics Society; Mirrors; Optical materials; Oxidation; Reflectivity; Refractive index; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-5633-0
Type
conf
DOI
10.1109/LEOSST.1999.794698
Filename
794698
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