Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55 μm

Author

Reimann, T. ; Schneider, M. ; Velling, P. ; Neumann, S. ; Agethen, M. ; Bertenburg, R.M. ; Heinzelmann, R. ; Stohr, A. ; Jager, D. ; Tegude, F.J.

Author_Institution

Dept. of Solid-State Electron., Duisburg Univ., Germany

fYear

2001

fDate

2001

Firstpage

440

Lastpage

443

Abstract

An electroabsorption waveguide modulator (EAM) for 1.55 μm is embedded into the layer-stack of a heterostructure bipolar transistor (HBT). The collector consists of a complete optical waveguide and enables the monolithic integration of modulators, transistors and also a new merged device to result in a modulator with integrated amplifier. At present this device offers a 3 dB cut-off frequency for optical modulation of 7 GHz and for pure electrical operation cut-off frequencies of f_T and f_max both of about 25 GHz

Keywords

electro-optical modulation; electroabsorption; heterojunction bipolar transistors; integrated optics; 1.55 mum; 25 GHz; 3 dB cut-off frequency; 7 GHz; electroabsorption waveguide modulator; heterostructure bipolar transistor integration; layer-stack; monolithic integration; multifunctional layer design; optical waveguide; Bipolar transistors; Cutoff frequency; Heterojunction bipolar transistors; Integrated optics; Monolithic integrated circuits; Optical devices; Optical modulation; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929168

Filename

929168