A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs

Author

Mertens, S.D. ; Alamo, J. A del

Author_Institution

MIT, Cambridge, MA, USA

fYear

2001

fDate

2001

Firstpage

452

Lastpage

455

Abstract

We have developed a model for the impact of the hydrogen-induced piezoelectric effect on the threshold voltage of InP HEMTs and GaAs PHEMTs. We have used 2D finite element simulations to calculate the mechanical stress caused by a gate that has expanded due to hydrogen-absorption. This has allowed us to map the piezo-electric charge distribution in the semiconductor heterostructure. We used a simple electrostatics model to calculate the impact of this piezo-electric polarization charge on the threshold voltage. We have found that the model explains experimentally observations of hydrogen-induced threshold voltage shifts, both in InP HEMTs and in GaAs PHEMTs

Keywords

III-V semiconductors; dielectric polarisation; finite element analysis; gallium arsenide; high electron mobility transistors; hydrogen; indium compounds; internal stresses; piezoelectric semiconductors; semiconductor device models; sorption; 2D finite element simulations; GaAs; GaAs PHEMT; H; InP; InP HEMT; electrostatics model; gate; hydrogen-absorption; hydrogen-induced piezoelectric effect; hydrogen-induced threshold voltage shifts; mechanical stress; piezo-electric charge distribution; piezo-electric polarization charge; semiconductor heterostructure; threshold voltage; Electrostatics; Finite element methods; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; PHEMTs; Piezoelectric effect; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929172

Filename

929172