• DocumentCode
    3182822
  • Title

    Integration of complementary NPN and PNP InAlAs/InGaAs HBTs

  • Author

    Cui, Delong ; Pavlidis, Dimitris ; Sawdai, Donald ; Chin, Patrick ; Block, Tom

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    497
  • Lastpage
    500
  • Abstract
    In this work, monolithic integration of NPN and PNP InAlAs/InGaAs complementary HBTs was demonstrated using a regrowth approach by MBE. The integrated HBTs showed little degradation over similar discrete devices. The DC gain was 35 for both integrated NPN and PNP HBTs. fT of 79.6 GHz and fmax of 109 GHz were achieved for NPN devices while fT of 11.6 GHz and fmax of 22.6 GHz were achieved for PNP devices
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; 109 GHz; 11.6 GHz; 22.6 GHz; 79.6 GHz; DC gain; InAlAs-InGaAs; MBE regrowth; complementary NPN InAlAs/InGaAs HBT; complementary PNP InAlAs/InGaAs HBT; cutoff frequency; maximum oscillation frequency; monolithic integration; Etching; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; Monolithic integrated circuits; Silicon compounds; Space technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929188
  • Filename
    929188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3182822