DocumentCode
3182900
Title
Distributed analysis of submicron-MESFET noise-properties
Author
Heinrich, W.
Author_Institution
Tech. Sch. of Darmstadt, West Germany
fYear
1988
fDate
25-27 May 1988
Firstpage
327
Abstract
A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<>
Keywords
Schottky gate field effect transistors; electron device noise; semiconductor device models; solid-state microwave devices; design-values; distributed MESFET noise analysis; equivalent-circuit elements; low-noise MESFETs; lumped-element models; microwave devices; submicron-MESFET noise-properties; validity of lumped element models; Circuit noise; Electrodes; Equivalent circuits; FETs; Frequency measurement; Geometry; MESFETs; Noise generators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22042
Filename
22042
Link To Document