Optimizing the power-added efficiency of a class B GaAs FET amplifier

Author

LeSage, S.R. ; Detra, J.A. ; Beyer, J.B.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

339

Abstract

A design routine is reported that optimizes the power-added efficiency of a class B microwave amplifier stage. The measured data required consists of device I-V data and one large-signal gain measurement at the microwave frequency of interest. The method is based on a simple circuit model from which the power-added efficiencies, resulting from a specific combination of the variables, can be calculated. Similar to the harmonic balanced method, this simulation iterates between time domain and frequency domain solutions until agreement is reached. Experimental results at 4.4 GHz are reported which support the procedure and which show efficiency increases of 15% when low impedance loading at even-harmonic frequencies are provided.<>

Keywords

III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 4.4 GHz; FET amplifier; GaAs; circuit model; class B; design routine; device I-V data; efficiency increases; frequency domain solutions; large-signal gain measurement; microwave amplifier stage; microwave frequency; optimisation; power-added efficiency; semiconductors; time domain solutions; Design optimization; Frequency measurement; Gain measurement; Gallium arsenide; Microwave FETs; Microwave amplifiers; Microwave devices; Microwave frequencies; Microwave measurements; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22045

Filename

22045