GaAs power MESFET performance sensitivity to profile and process parameter variations

Author

Yan, J.B. ; Trew, R.J. ; Stoneking, D.E.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

343

Abstract

Large signal performance sensitivities are calculated and compared for power GaAs MESFETs fabricated with uniform, ion-implanted, and lo-hi-lo doping profiles. Variations in radio-frequency (RF) power, power-added efficiency, gain, and device linearity are determined for the various devices as a function of process-dependent parameters. It is demonstrated that the channel doping profile design and breakdown voltage have the most significant influence on large-signal RF performance.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; power transistors; sensitivity analysis; solid-state microwave devices; GaAs; RF power; breakdown voltage; channel doping profile design; device linearity; gain; ion-implanted doping profiles; large-signal RF performance; lo-hi-lo doping profiles; microwave devices; performance sensitivities; power MESFET performance sensitivity; power-added efficiency; process parameter variations; process-dependent parameters; uniform doping profiles; Circuit simulation; Doping profiles; Equivalent circuits; Gallium arsenide; MESFETs; Power generation; Power system harmonics; Radio frequency; Semiconductor process modeling; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22046

Filename

22046