Design and realization of sub 100 nm gate length HEMTs

Author

Parenty, T. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A.

Author_Institution

Dept. Hyperfrequences et Semicond., CNRS, Villeneuve d´´Ascq, France

fYear

2001

fDate

2001

Firstpage

626

Lastpage

629

Abstract

Standard layer structure InAlAs/InGaAs/EnP designed for 100 nanometer gate length High Electron Mobility Transistors (HEMTs) become inadequate, if we reduce the gate length under 100 nm. An InAlAs/InGaAs/InP layer structure optimized for 50 nanometer gate length HEMTs has been realized. DC and microwave characteristics are reported on HEMTs realized on a standard layer and an optimized layer, with similar gate length. Comparable cutoff frequencies f_T are obtained for both devices. The main result is a large improvement of maximum oscillation frequency f_max, which is 260 GHz and 470 GHz for respectively the standard and the optimized devices. This behavior is attributed to the reduction of short channel effects

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; 50 nm; DC characteristics; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP layer structure; cutoff frequency; design optimization; gate length; high electron mobility transistor; maximum oscillation frequency; microwave characteristics; short channel effect; Cutoff frequency; Doping; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices; Performance gain; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929234

Filename

929234