Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell

Author

Yamamoto, Kenji ; Suzuki, Takayuki ; Yoshimi, Masashi ; Nakajima, Akihiko

Author_Institution

Central Res. Labs., Kaneka Corp., Kobe, Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

661

Lastpage

664

Abstract

The excellent high short circuit current density (Jsc) above 24 mA/cm² and the efficiency of 6.8% at the 6 μm thin cell fabricated on glass substrate is demonstrated. This advantage of high Jsc was applied to the a-Si:H(0.3 μnm)/polycrystalline-Si(6 μm) tandem solar cell, which exhibits the efficiency of 10.4% and the Jsc of 11.6 mA/cm². We have found that the textured Si thin film can be prepared by adjusting the deposition conditions. The 4 μm thick textured Si thin film showed an effective optical thickness of 67 μm and corresponding effective optical pass length of 16 times the layer thickness

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor thin films; short-circuit currents; silicon; solar cells; 10.4 percent; 300 nm; 4 mum; 6 mum; 6.8 percent; 67 mum; Si:H-Si; a-Si:H/polycrystalline Si tandem solar cell; deposition conditions; effective optical pass length; effective optical thickness; glass substrate; high short circuit current density; low temperature fabrication; textured Si thin film; thin film polycrystalline Si solar cell; Fabrication; Glass; Optical films; Photovoltaic cells; Semiconductor thin films; Short circuit currents; Sputtering; Substrates; Temperature; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564215

Filename

564215