Thin-film resonator ladder filter

Author

Mang, L. ; Hickernell, E. ; Pennell, R. ; Hickernell, T.

Author_Institution

Corp. Res. Lab., Motorola Inc., Phoenix, AZ, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

887

Abstract

Thin-film bulk acoustic wave resonator (BAWR) ladder filters have been realized with IL/spl sim/2.2 dB, and selectivity /spl sim/15 dB for a three resonator filter, IL/spl sim/5 dB and selectivity /spl sim/32 dB for a five resonator filter. Filters with seven and nine resonators have also been characterized. This performance corresponds to achieving a figure of merit Q/r/spl sim/10. The performance possibilities of ladder filters have been calculated with the Q/r figure of merit as a parameter. It is anticipated with improvements in processing and device designs, AlN or ZnO thin-film BAWR ladder filters should achieve IL/spl sim/1.5 dB and selectivity /spl sim/40 dB, corresponding to Q/r/spl sim/40 at 1.5 GHz.<>

Keywords

UHF filters; bulk acoustic wave devices; ladder filters; passive filters; resonator filters; thin film devices; 1.5 GHz; AlN; BAW resonator filters; UHF filters; ZnO; bulk acoustic wave resonator; thin-film resonator ladder filter; Acoustic waves; Band pass filters; Bandwidth; Fabrication; Frequency; Insertion loss; Resonator filters; Thin film circuits; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405905

Filename

405905