• DocumentCode
    3186695
  • Title

    80-GHz and 40-GHz frequency dividers in 65-nm CMOS

  • Author

    Matsumura, Hiroshi

  • Author_Institution
    Automotive Electron. Group, Fujitsu Ten Ltd., Nakatsugawa, Japan
  • fYear
    2009
  • fDate
    7-10 Dec. 2009
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    High-speed CMOS frequency dividers with different topologies were investigated. An 80-GHz regenerative frequency divider (RFD) and a 40-GHz static frequency divider (SFD) were designed and fabricated in 65-nm CMOS technology. The RFD operates from 75.0 GHz up to 85.0 GHz, the highest speed in previously-reported CMOS RFDs, and consumes 5.17 mW from 1.2 V supply. The SFD operates from 5.0 GHz to 42.0 GHz and consumes 6.76 mW from 1.2 V supply. The divider core circuit of 80-GHz RFD and 40-GHz SFD occupy chip areas of 90 ¿m × 60 ¿m and 110 ¿m × 80 ¿m, respectively.
  • Keywords
    CMOS integrated circuits; MIMIC; frequency dividers; divider core circuit; frequency 40 GHz; frequency 5.0 GHz to 42.0 GHz; frequency 75.0 GHz to 85.0 GHz; frequency 80 GHz; high-speed CMOS frequency dividers; power 5.17 mW; power 6.76 mW; regenerative frequency divider; size 65 nm; static frequency divider; voltage 1.2 V; Frequency conversion; CMOS; frequency divider; millimeter wave; regenerative;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. APMC 2009. Asia Pacific
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2801-4
  • Electronic_ISBN
    978-1-4244-2802-1
  • Type

    conf

  • DOI
    10.1109/APMC.2009.5385390
  • Filename
    5385390