DocumentCode
3186695
Title
80-GHz and 40-GHz frequency dividers in 65-nm CMOS
Author
Matsumura, Hiroshi
Author_Institution
Automotive Electron. Group, Fujitsu Ten Ltd., Nakatsugawa, Japan
fYear
2009
fDate
7-10 Dec. 2009
Firstpage
297
Lastpage
300
Abstract
High-speed CMOS frequency dividers with different topologies were investigated. An 80-GHz regenerative frequency divider (RFD) and a 40-GHz static frequency divider (SFD) were designed and fabricated in 65-nm CMOS technology. The RFD operates from 75.0 GHz up to 85.0 GHz, the highest speed in previously-reported CMOS RFDs, and consumes 5.17 mW from 1.2 V supply. The SFD operates from 5.0 GHz to 42.0 GHz and consumes 6.76 mW from 1.2 V supply. The divider core circuit of 80-GHz RFD and 40-GHz SFD occupy chip areas of 90 ¿m à 60 ¿m and 110 ¿m à 80 ¿m, respectively.
Keywords
CMOS integrated circuits; MIMIC; frequency dividers; divider core circuit; frequency 40 GHz; frequency 5.0 GHz to 42.0 GHz; frequency 75.0 GHz to 85.0 GHz; frequency 80 GHz; high-speed CMOS frequency dividers; power 5.17 mW; power 6.76 mW; regenerative frequency divider; size 65 nm; static frequency divider; voltage 1.2 V; Frequency conversion; CMOS; frequency divider; millimeter wave; regenerative;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location
Singapore
Print_ISBN
978-1-4244-2801-4
Electronic_ISBN
978-1-4244-2802-1
Type
conf
DOI
10.1109/APMC.2009.5385390
Filename
5385390
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