Radiation evaluation of the 80C186 16-bit microprocessor utilizing an in-circuit emulator for in-situ electrical biasing and characterization

Author

Shaw, D.C. ; Lee, C.I.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1995

fDate

34899

Firstpage

60

Lastpage

63

Abstract

Radiation characterization data for the 80C186 16-bit microprocessor for two manufacturers are presented. An approach using an in-circuit emulator (ICE) to implement in-situ dynamic biasing and functional testing was used. Test results showed parametric failure levels that differ by more than a factor of 10 between devices from two manufacturers. Accelerated annealing measurements show that the Intel microprocessor does not anneal significantly until the annealing temperature is elevated to 150°C while the Advanced Micro Devices (AMD) device exhibits more rapid annealing characteristics. Implications for space application and hardness assurance are discussed

Keywords

CMOS digital integrated circuits; annealing; automatic testing; computer testing; failure analysis; gamma-ray effects; integrated circuit reliability; integrated circuit testing; microprocessor chips; radiation effects; radiation hardening (electronics); 150 C; 16 bit; 80C186 16-bit microprocessor; Advanced Micro Devices microprocessor; CHMOS process; Intel microprocessor; accelerated annealing measurements; dynamic biasing; functional testing; hardness assurance; in-situ electrical biasing; incircuit emulator; parametric failure levels; radiation characterization data; radiation evaluation; space application; Annealing; Automatic testing; Costs; Ice; Laboratories; Manufacturing; Microprocessors; Propulsion; Space technology; Space vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE

Conference_Location

Madison, WI

Print_ISBN

0-7803-3100-1

Type

conf

DOI

10.1109/REDW.1995.483378

Filename

483378