DocumentCode
3188533
Title
Parameter extraction and calorimetric validation for a silicon carbide JFET PSpice model
Author
Kumar Singh, Santosh ; Guedon, Florent ; McMahon, Richard ; Weier, Sven
Author_Institution
Electronics Power and Energy Conversion group, Electrical Engineering Division, CAPE, University of Cambridge, UK
fYear
2010
fDate
19-21 April 2010
Firstpage
1
Lastpage
6
Abstract
This paper focuses on the PSpice model of SiC-JFET element inside a SiCED cascode device. The device model parameters are extracted from the I–V and C-V characterization curves. In order to validate the model, an inductive test rig circuit is designed and tested. The switching loss is estimated both using oscilloscope and calorimeter. These results are found to be in good agreement with the simulated results.
Keywords
Cascode; JFET; Silicon carbide (SiC); calorimeter; threshold voltage;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics, Machines and Drives (PEMD 2010), 5th IET International Conference on
Conference_Location
Brighton, UK
Type
conf
DOI
10.1049/cp.2010.0121
Filename
5522515
Link To Document