DocumentCode
3192224
Title
CMOS Based Low Cost Temperature Sensor
Author
Jandhyala, Neehar ; He, Lili ; Jones, Morris
Author_Institution
San Jose State Univ., San Jose
fYear
2008
fDate
17-19 March 2008
Firstpage
293
Lastpage
296
Abstract
This paper presents the design of low power, low cost design of temperature sensor that has been designed keeping in view VLSI circuits and technology changes. The circuit occupies an area close to 0.01 mm , which is less than 1/100th of the area occupied by most of the previous circuits that use capacitors and A/D converters. Power dissipation of the circuit ranges from 800 muW to 1.2 mW for temperatures ranging between -20degC to 80degC. It has been implemented using TSMC 0.18 mum technology.
Keywords
CMOS integrated circuits; VLSI; temperature sensors; CMOS based temperature sensor; TSMC 0.18 mum technology; VLSI circuits; power 800 muW to 1.2 mW; power dissipation; size 0.18 mum; CMOS technology; Circuits; Costs; Equations; Frequency; MOSFETs; Propagation delay; Resistors; Temperature distribution; Temperature sensors; low cost; low power; temperature sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
978-0-7695-3117-5
Type
conf
DOI
10.1109/ISQED.2008.4479742
Filename
4479742
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