2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538)

This year the scope of the conference was expanded. In addition to plasma related damage, degradation of devices and circuits resulting from non-plasma sources was included to cover all process-induced phenomena that influence the electrical behavior of silicon devices and circuits. Consequently P2ID will now also be the premier forum for the latest work in the field of contamination assessment and management; this is becoming more important in modern metallization schemes and for the material innovations required for the fabrication of novel non-volatile memory products such as FeRAMS and MRAMS. The interconnect crisis is addressed and such topics as low-κ intermetal dielectrics, D₂ annealing, contamination risk in silicon technology, and high-κ dielectrics are covered.