DocumentCode
3192894
Title
The impact of plasma charging damage on the RF performances of deep-submicron silicon MOSFET
Author
Pantisano, L. ; Cheung, K.P. ; Smith, P. ; Chen, C.Y. ; Hwang, D. ; Fiorillo, S. ; Keller, R. ; Paccagnella, A.
Author_Institution
Agere Syst., Murray Hill, NJ, USA
fYear
2001
fDate
2001
Firstpage
56
Lastpage
59
Abstract
Plasma charging damage impact on the performance of deep submicron MOSFETs has investigated for the first time. Annealing of defects created by charging damage is found to be progressively improved with temperature. At 400°C, annealing is complete for both the DC and RF parameters but not thin oxide breakdown reliability
Keywords
CMOS integrated circuits; MOSFET; annealing; microwave field effect transistors; plasma materials processing; semiconductor device reliability; semiconductor device testing; surface treatment; 400 C; DC parameters; MOSFET; MOSFET performance; RF parameters; RF performance; anneal temperature; defect annealing; plasma charging damage; thin oxide breakdown reliability; Annealing; Degradation; MOSFET circuits; Plasma measurements; Plasma properties; Plasma simulation; Plasma temperature; Radio frequency; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-9651577-5-X
Type
conf
DOI
10.1109/PPID.2001.929978
Filename
929978
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