DocumentCode
3193035
Title
Uncooled 40-Gbps direct modulation of 1.3-µm-wavelength AlGaInAs distributed reflector lasers with semi-insulating buried-heterostructure
Author
Yamamoto, T. ; Uetake, A. ; Otsubo, K. ; Matsuda, M. ; Okumura, S. ; Tomabechi, S. ; Ekawa, M.
Author_Institution
Photonics Electron. Technol. Res. Assoc. (PETRA), Tokyo, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
193
Lastpage
194
Abstract
1.3-μm-wavelength AlGaInAs distributed reflector lasers were investigated for uncooled high-speed direct modulation. 40-Gbps modulation under low driving current of 50 mA up to 50°C and 40-Gbps eye opening at 85°C are demonstrated.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; optical modulation; semiconductor lasers; bit rate 40 Gbit/s; current 50 mA; distributed reflector lasers; semi-insulating buried-heterostructure; temperature 85 degC; uncooled direct modulation; wavelength 1.3 mum; Current measurement; Distributed Bragg reflectors; Lasers; Modulation; Oscillators; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642646
Filename
5642646
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