Charging damage in floating metal-insulator-metal capacitors

Author

Ackaert, Jan ; Wan, Zhichun ; De Backer, Eddy ; Coppens, Peter

Author_Institution

Alcatel Microelectron., Oudenaarde, Belgium

fYear

2001

fDate

2001

Firstpage

120

Lastpage

123

Abstract

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation

Keywords

MIM devices; dielectric thin films; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; surface charging; thin film capacitors; CID; MIMC; MIMC devices; capacitor plates; charging damage; charging induced damage; damage source; exposed antenna area ratio; floating metal-insulator-metal capacitors; interconnect length; logarithmic relation; voltage potential difference build-up; voltage potential induced damage; Breakdown voltage; Dielectrics; Failure analysis; Insulation; Integrated circuit interconnections; MIM capacitors; Metal-insulator structures; Microelectronics; Plasmas; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2001 6th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-5-X

Type

conf

DOI

10.1109/PPID.2001.929993

Filename

929993