• DocumentCode
    3193200
  • Title

    202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

  • Author

    Fedorova, K.A. ; Cataluna, M.A. ; Krestnikov, I. ; Livshits, D. ; Rafailov, E.U.

  • Author_Institution
    Photonics & Nanosci. Group, Univ. of Dundee, Dundee, UK
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    172
  • Lastpage
    173
  • Abstract
    Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InAs-GaAs; broadly tunable high-power external cavity; continuous tuning; high power external-cavity quantum-dot laser; power 455 mW; tuning range; Gallium arsenide; Laser tuning; Optical waveguides; Photonics; Power generation; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642655
  • Filename
    5642655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3193200