Highly reliable interconnect integration of Cu and low-k organic polymer based on fine CD controls

Author

Nishioka, Y. ; Tomohisa, S. ; Toyoda, Y. ; Fukada, T. ; Satake, T. ; Matsuura, M. ; Domae, S. ; Ohsaki, A.

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2001

fDate

6-6 June 2001

Firstpage

54

Lastpage

56

Abstract

A Cu dual damascene interconnect with a low-k organic polymer was fabricated and CD changes of its vias and trenches were investigated. By means of optimizing both the SiO₂ etching condition and the SiN thickness in a stacked hard mask, CD changes of trenches from a designed pattern size to the final one were suppressed up to about 10 nm. As a result, electrical properties were controlled and kept close to calculated values from the designed pattern size. This synthetic process integration based on the fine CD control technique is promising for the realization of a fine dual damascene interconnect of 0.13-μm and further technology node.

Keywords

copper; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; masks; polymers; process control; silicon compounds; 0.13 mum; Cu; Cu dual damascene interconnect; SiN; SiN thickness; SiO/sub 2/; SiO/sub 2/ etching condition; electrical properties; fine CD control technique; fine CD controls; fine dual damascene interconnect; highly reliable interconnect integration; low-k organic polymer; pattern size; stacked hard mask; synthetic process integration; trenches; vias; Design optimization; Dielectric materials; Etching; Fabrication; Polymer films; Research and development; Resists; Silicon compounds; Size measurement; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930015

Filename

930015