Chemically induced defects during copper polish

Author

Miller, Anne E. ; Fischer, Paul B. ; Feller, A. Daniel ; Cadien, Kenneth C.

Author_Institution

Intel Corp., Hillsboro, OR, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

143

Lastpage

145

Abstract

A high yielding copper damascene process requires defect-free copper surfaces after Cu polish. Critical defects derive from corrosion processes such as pitting corrosion, galvanic corrosion and excess etching. Changes in process conditions for Cu polish as well as the interaction with Ta polish step in a two-step (Cu/Ta) Ta polish can assist in defect reduction. Since these corrosion defects derive from the slurry chemistry itself, their quantities can be significantly reduced but not eliminated with process module changes.

Keywords

chemical mechanical polishing; copper; corrosion; etching; integrated circuit interconnections; integrated circuit metallisation; CMP; Cu; chemically induced defects; defect reduction; defect-free copper surfaces; excess etching; galvanic corrosion; high-yielding damascene process; low pH; module level interactions; pitting corrosion; process conditions; process module changes; two-step polish; Artificial intelligence; Chemicals; Copper; Corrosion; Etching; Galvanizing; Oxidation; Passivation; Protection; Slurries;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930041

Filename

930041