Properties of ion-implanted low-k organic SOG

Author

Matsubara, Naoteru ; Mizuhara, H. ; Yamashita, K.M.K. ; Goto, Tetsu ; Inoue, Yasuyuki ; Ibaraki, A.

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Gifu, Japan

fYear

2001

fDate

6-6 June 2001

Firstpage

165

Lastpage

167

Abstract

The properties of ion-implanted low-k organic SOG films were investigated in detail. It was found that the organic species of the SOG were decomposed and that the film density of the SOG was increased by ion implantation. Consequently the oxygen plasma resistance of the ion-implanted SOG film was improved, and a good characteristic was obtained for via resistance. We applied the ion-implanted SOG film to 180 nm Al-based interconnects, and it was found that the film between the metal lines preserves its low-k characteristics (k=3.1). Furthermore, copper diffusion in the organic SOG film was reduced by ion implantation, making it possible to apply the ion-implanted SOG to a Cu diffusion barrier layer.

Keywords

aluminium; chemical interdiffusion; copper; density; dielectric thin films; diffusion barriers; glass; integrated circuit interconnections; integrated circuit metallisation; ion implantation; organic compounds; plasma materials processing; spin coating; 180 nm; Al; Al-based interconnects; Cu; Cu diffusion barrier layer; copper diffusion; film density; ion implantation; ion-implanted SOG film; ion-implanted low-k organic SOG films; low-k characteristics; metal line; organic species; oxygen plasma resistance; via resistance; Adhesives; Copper; Delay; Dielectric constant; Fabrication; Ion implantation; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930048

Filename

930048