Ultra-broadband characterization of Schottky diodes

Accurate ultra-broadband measurements were obtained for the purpose of modeling two unique W-band flipchip Schottky diodes. Single-anode (SA) and zero bias detector (ZBD) Schottkys, available from Virginia Diodes Inc., were characterized from DC to 125GHz using on-wafer coplanar waveguide (CPW) test fixtures on a 10-mil Quartz substrate. Broadband S-parameters were measured from 70 KHz to 125 GHz using Anritsu´s VectorStar ME7838A mm-wave vector network analyzer (VNA). The motivation for this work was to obtain broad-band multi-bias S-parameter data to be used as a partial data set to extract and validate state-of-the-art non-linear diode models for these two devices. This particular paper will be focused on the S-parameter data and associated calibrations and validations performed. To our knowledge this is the broadest band experimental study of Schottky diodes to date.