DocumentCode
3194182
Title
Refractory metal carbide based diffusion barriers for copper metallization
Author
Sun, S.C. ; Tsai, H.Y. ; Wang, S.J.
Author_Institution
ProMOS Technol., Hsinchu, Taiwan
fYear
2001
fDate
6-6 June 2001
Firstpage
201
Lastpage
203
Abstract
The electrical, physical, and barrier properties of PVD refractory metal carbide (TiCx, TaCx, and WCx) thin films were investigated for Cu metallization. The 60-nm thick TiCx, TaCx, and WCx exhibit a resistivity of 1200, 385, and 227 μΩ-cm, respectively. Although XRD and sheet resistance measurements indicate that the thermal stability of TaCx is about 50-100°C higher, the maximum stability temperature based on the diode leakage data is about the same among all three materials.
Keywords
X-ray diffraction; copper; diffusion barriers; electrical resistivity; metallisation; refractories; thermal stability; Cu; PVD; TaC; TiC; WC; X-ray diffraction; copper metallization; diffusion barrier; diode leakage current; electrical resistivity; refractory metal carbide; sheet resistance; thermal stability; Atherosclerosis; Conductivity; Copper; Electrical resistance measurement; Metallization; Temperature; Thermal resistance; Thermal stability; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location
Burlingame, CA, USA
Print_ISBN
0-7803-6678-6
Type
conf
DOI
10.1109/IITC.2001.930060
Filename
930060
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