DocumentCode
3194347
Title
MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates
Author
Liebich, S. ; Zimprich, M. ; Ludewig, P. ; Beyer, A. ; Volz, K. ; Stolz, W. ; Kunert, B. ; Hossain, N. ; Jin, S.R. ; Sweeney, S.J.
Author_Institution
Dept. of Phys., Philipps-Univ., Marburg, Germany
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
143
Lastpage
144
Abstract
In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; integrated optics; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; Ga(NAsP); MOVPE growth; Si; Si (001) substrates; electrical current injection lattice; monolithical integration; multiquantum well laser structure; orientated substrates; structural characterization; Crystals; Lattices; Semiconductor lasers; Silicon; Substrates; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642712
Filename
5642712
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