Robust GaAs MMIC amplifiers using planar ion-implanted power MESFETs with improved open-channel burnout

Author

Miller, D.C. ; Sadler, R.A. ; Peake, A.H.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

449

Abstract

Planar ion-implanted GaAs MESFETs with modified drain n/sup +/ regions show increased open-channel burnout voltage, making them robust against transient overvoltages. This increases circuit yields through pulsed on-wafer testing from <50% to /spl sim/90%. Higher drain biases can also be used, allowing 9 W of output power to be produced with VD/sub DS/=13 V by an X-band MMIC amplifier designed to produce 4 W with V/sub DS/=7 V.<>

Keywords

III-V semiconductors; MMIC power amplifiers; S-parameters; gallium arsenide; ion implantation; microwave field effect transistors; microwave power transistors; power MESFET; power amplifiers; power field effect transistors; semiconductor device testing; 0.5 to 18 GHz; 13 V; 9 GHz; 9 W; GaAs; S-parameters; X-band MMIC amplifier; circuit yields; drain bias; modified drain n/sup +/ regions; open-channel burnout voltage; output power; planar ion-implanted power MESFETs; pulsed on-wafer testing; robust GaAs MMIC amplifiers; transient overvoltage robustness; Circuit testing; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Pulse amplifiers; Pulse circuits; Robustness; Surges; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405949

Filename

405949