• DocumentCode
    3194543
  • Title

    Electromigration reliability of dual damascene copper interconnect with different IMD structures

  • Author

    Wee, Young-Jin ; Park, Ki-Chul ; Song, Won-Sang ; Lee, Hyeon-Deok ; Kang, Bo-Kyu ; Moon, Joo-Tae

  • Author_Institution
    Process Dev. Team, Samsung Electron. Co. Ltd., Kyounggi, South Korea
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    260
  • Lastpage
    262
  • Abstract
    Electromigration behavior of dual damascene Cu interconnect has been investigated comparing PE-TEOS SiO 2 with fluorine doped SiO 2 (FSG). MTFs of FSG in both line and contact EM tests were significantly shorter than those of PE-TEOS. The higher compressive stress and fluorine of FSG dielectric are considered to affect the EM reliability performance of the confined Cu interconnect.
  • Keywords
    copper; dielectric thin films; electromigration; integrated circuit interconnections; internal stresses; silicon compounds; Cu-SiO/sub 2/; Cu-SiO/sub 2/:F; PE-TEOS SiO/sub 2/; compressive stress; copper dual damascene interconnect; electromigration reliability; fluorine doped SiO/sub 2/; inter-metal dielectric; low-k dielectric; mean-time-to-failure; Adhesives; Copper; Dielectric materials; Dry etching; Electromigration; Heating; Stress; Testing; Thermal conductivity; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930078
  • Filename
    930078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3194543