Electromigration threshold in single-damascene copper interconnects with SiO/sub 2/ dielectrics

Author

Wang, P.-C. ; Filippi, R.G. ; Gignac, L.M.

Author_Institution

Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

263

Lastpage

265

Abstract

We demonstrate the electromigration threshold, or the so-called short-length effect, in single-damascene copper interconnects with SiO₂ dielectrics. With standard electrical lifetime measurements and a simplified equation based on the Blech model, the length-dependent electromigration behavior is studied quantitatively over a temperature range between 295°C and 400°C. It is shown that the electromigration threshold becomes more prominent with decreasing temperature. The applicability of the proposed equation is justified, and the practical aspects of the electromigration threshold in copper technologies are discussed.

Keywords

copper; dielectric thin films; electromigration; integrated circuit interconnections; silicon compounds; 295 to 400 C; Blech model; Cu-SiO/sub 2/; SiO/sub 2/ dielectric; electrical lifetime; electromigration threshold; short-length effect; single-damascene copper interconnect; Cathodes; Compressive stress; Copper; Current density; Dielectrics; Electric resistance; Electromigration; Equations; Integrated circuit interconnections; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930079

Filename

930079