DocumentCode
3195948
Title
Forward and reverse recovery behaviour of diodes in power converter applications
Author
Shammas, Noel ; Chamund, Dinesh ; Taylor, Paul
Author_Institution
Fac. of Comput., Eng. & Technol., Staffordshire Univ., Stafford, UK
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
3
Abstract
In this paper we report the characteristics, design considerations and the interaction of fast recovery diodes with the main power semiconductor switch such as thyristors, GTOs, and IGBTs for high power conversion applications. We briefly explain the switching phenomena in diodes and how these are characterised and optimised by using different structures for specific applications in conjunction with main switching devices.
Keywords
power semiconductor diodes; power semiconductor switches; semiconductor device models; semiconductor device reliability; thyristors; GTOs; IGBTs; diodes; forward behaviour; high power conversion applications; main power semiconductor switch; power converter applications; reverse recovery behaviour; thyristors; Conductivity; Insulated gate bipolar transistors; Inverters; Power conversion; Semiconductor diodes; Snubbers; Switches; Switching circuits; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314548
Filename
1314548
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