• DocumentCode
    3197896
  • Title

    Characterization of surface profile for surface activated bonding by using Power Spectral Density function

  • Author

    Tsukamoto, Kei ; Suga, Tadatomo

  • Author_Institution
    Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    13-16 Sept. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In Surface Activated Bonding (SAB), high surface flatness is required for the stability of bonding. Though RMS (Root Mean Square) is often used for the evaluation of surface roughness, RMS is not always enough to express surface roughness appropriately. Therefore, we introduced a numerical method called as Power Spectral Density function to the surfaces of bonding targets. In this research silicon, gold and copper samples are evaluated.
  • Keywords
    bonding processes; integrated circuit packaging; surface roughness; RMS; SAB; bonding stability; microelectronic packaging; numerical method; power spectral density function; root mean square; surface activated bonding; surface flatness; surface profile characterization; surface roughness evaluation; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic System-Integration Technology Conference (ESTC), 2010 3rd
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4244-8553-6
  • Electronic_ISBN
    978-1-4244-8554-3
  • Type

    conf

  • DOI
    10.1109/ESTC.2010.5642889
  • Filename
    5642889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3197896