Modeling of DCIV recombination currents using a multistate multiphonon model

We study p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the direct-current-current-voltage (DCIV) method before and after bias temperature stress. The stress is varied over a wide range of temperatures using our polyheater technology. The ability of the SRH model and a multistate non-radiative multiphonon (NMP) model to meaningfully reproduce the acquired DCIV data is compared. It is demonstrated that the SRH model cannot capture the detailed features of the data and a more detailed model is required.